inchange semiconductor product specification silicon npn power transistors 2SC3866 description ? ? with to-220fa package ? high speed switching ? high voltage ?high reliability applications ? switching regulators ? ultrasonic generators ? high frequency inverters ? general purpose power amplifiers pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 10 v i c collector current 3 a i b base current 1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 3.0 ??/w fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3866 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 800 v v (br)cbo collector-base breakdown voltage i c =1ma , i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma , i c =0 10 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =900v; i e =0 1.0 ma i ebo emitter cut-off current v eb =10v; i c =0 1.0 ma h fe dc current gain i c =1a ; v ce =5v 10 switching times t on turn-on time 1.0 | s t s storage time 4.0 | s t f fall time i c =2a; i b1 =0.4a i b2 =-0.8a;r l =150 |? pw=20 | s,duty ? 2% 0.8 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC3866 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC3866
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